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[IEEE 12th Annual Symposium on Gallium Arsenide Integrated Circuit (GaAs IC) - New Orleans, LA, USA (7-10 Oct. 1990)] 12th Annual Symposium on Gallium Arsenide Integrated Circuit (GaAs IC) - Use of two-dimensional process and device modeling to solve some real problems in GaAs MESFET design and analysis

[IEEE 12th Annual Symposium on Gallium Arsenide Integrated Circuit (GaAs IC) - New Orleans, LA, USA (7-10 Oct. 1990)] 12th Annual Symposium on Gallium Arsenide Integrated Circuit (GaAs IC) - Use of two-dimensional process and device modeling to solve some real problems in GaAs MESFET design and analysis

Anholt, R.

作者Anholt, R.
文件大小235.47KB
发表时间1990
DOI10.1109/gaas.1990.175524
页码339-342

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