Electronic properties of n - i - p - i structures in elemental Si/Ge strained-layer superlattices
- 期刊名称Physical Review B
- 作者Gallup, R. F.; Fong, C. Y.
- 卷第41卷
- 期第8期
- 印刷ISSN0163-1829
- 电子ISSN1095-3795
- 文件大小488.06KB
- 发表时间1990-3-15
- DOI10.1103/PhysRevB.41.5104
- 页码5104-5111
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