Electrical and structural study of partially relaxed Ga0.92In0.08As(p+)/ GaAs(n) diodes
- 作者Y. W. Choi; C. R. Wie; K. R. Evans; C. E. Stutz
- 文件大小982.50KB
- 发表时间1990
- DOI10.1063/1.346699
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