Low-Temperature Deposition of Hydrogen-Free Silicon Oxynitride without Stress by the Remote Plasma Technique
- 期刊名称Japanese Journal of Applied Physics
- 作者Fuyuki, Takashi; Saitoh, Takashi; Matsunami, Hiroyuki
- 卷第29卷
- 印刷ISSN0021-4922
- 电子ISSN1347-4065
- 文件大小501.91KB
- 发表时间1990-10-20
- DOI10.1143/JJAP.29.2247
- 页码2247-2250
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