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Electrical Properties of Gallium Fluoride(GaF3)/GaAs Interface with and without Sulfur Treatment

Electrical Properties of Gallium Fluoride(GaF3)/GaAs Interface with and without Sulfur Treatment

H. Ricard; K. H. Kim; K. Aizawa; H. Ishiwara

作者H. Ricard; K. H. Kim; K. Aizawa; H. Ishiwara
文件大小457.50KB
发表时间1990
DOI10.1143/JJAP.29.L2460

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