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Effect of oxide resistance on the characterization of interface trap density in MOS structures

Effect of oxide resistance on the characterization of interface trap density in MOS structures

Jing-Jenn Lin; Jenn-Gwo Hwu
  • 作者Jing-Jenn Lin; Jenn-Gwo Hwu
  • 卷第34卷
  • 期第12期
  • 印刷ISSN0038-1101
  • 文件大小450.97KB
  • 发表时间1991
  • DOI10.1016/0038-1101(91)90043-x
  • 页码1449-1454
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