Effect of well and substrate parameters on the latchup degradation of CMOS structures during e-beam voltage contrast measurements
- 作者F.M. Roche; S.D. Bocus; P. Girard
- 卷第15卷
- 印刷ISSN0167-9317
- 文件大小173.91KB
- 发表时间1991
- DOI10.1016/0167-9317(91)90193-h
- 页码113-116
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