MOS characteristics of ultrathin SiO/sub 2/ prepared by oxidizing Si in N/sub 2/O
- 期刊名称IEEE Electron Device Letters
- 作者Ting, W.; Lo, G.Q.; Ahn, J.; Chu, T.Y.; Kwong, D.L.
- 卷第12卷
- 期第8期
- 印刷ISSN0741-3106
- 电子ISSN1558-0563
- 文件大小273.39KB
- 发表时间1991-08
- DOI10.1109/55.119150
- 页码416-418
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