Current gain enhancement in bipolar transistors by low-energy ion beam modification of the polycrystalline silicon emitter

Jalali, B.; King, C. A.; Higashi, G. S.; Bean, J. C.; Hull, R.; Hsieh, Y.-F.; Macaulay, J.; Poate, J. M.

期刊名称Applied Physics Letters
作者Jalali, B.; King, C. A.; Higashi, G. S.; Bean, J. C.; Hull, R.; Hsieh, Y.-F.; Macaulay, J.; Poate, J. M.
卷第58卷
期第18期
印刷ISSN0003-6951
文件大小627.34KB
发表时间1991
DOI10.1063/1.105023

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