Intrinsic, heterointerface excitonic states in GaAs(n)/Al0.3Ga0.7As( p) double heterostructures
- 期刊名称Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- 作者Gilliland, G. D.
- 卷第9卷
- 期第4期
- 印刷ISSN0734-211X
- 文件大小1008.76KB
- 发表时间1991-7
- DOI10.1116/1.585706
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