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Effects of low-dose Si implantation damage on diffusion of phosphorus and arsenic in Si

Effects of low-dose Si implantation damage on diffusion of phosphorus and arsenic in Si

Park, Heemyong; Law, Mark E.

期刊名称Applied Physics Letters
作者Park, Heemyong; Law, Mark E.
卷第58卷
期第7期
印刷ISSN0003-6951
文件大小558.84KB
发表时间1991
DOI10.1063/1.104530

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