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Si-N Bonding at the SiO2/Si Interfaces During Deposition of SiO2 by the Remote Pecvd Process

Si-N Bonding at the SiO2/Si Interfaces During Deposition of SiO2 by the Remote Pecvd Process

Ma, Y.; Yasuda, T.; Habermehl, S.; Lucovsky, G.
  • 期刊名称MRS Proceedings
  • 作者Ma, Y.; Yasuda, T.; Habermehl, S.; Lucovsky, G.
  • 卷第236卷
  • 电子ISSN1946-4274
  • 文件大小335.57KB
  • 发表时间1991-1
  • DOI10.1557/proc-236-341
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