Optimized trench MOSFET technologies for power devices
- 作者Shenai, K.
- 卷第39卷
- 期第6期
- 印刷ISSN0018-9383
- 电子ISSN1557-9646
- 文件大小977.68KB
- 发表时间1992
- DOI10.1109/16.137324
- 页码1435-1443
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