Crucial Issues in Semiconductor Materials and Processing Technologies || Dislocation formation in Si implanted at elevated temperature
- 作者Coffa, S.; Priolo, F.; Rimini, E.; Poate, J. M.
- 文件大小1377.79KB
- 发表时间1992
- DOI10.1007/978-94-011-2714-1_21
- 页码219-224
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