Improvement of interface electronic properties of GaF3/GaAs MIS structures
- 作者H. Ricard; K. Aizawa; H. Ishiwara
- 印刷ISSN0169-4332
- 文件大小335.81KB
- 发表时间1992
- DOI10.1016/0169-4332(92)90355-2
- 页码888-893
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