Room temperature 632.7 nm CW operation of AlGaInP strained multiquantum well lasers grown on (100) GaAs
Yoshida, I.; Katsuyama, T.; Hashimoto, J.; Taniguchi, Y.; Hayashi, H.
- 期刊名称Electronics Letters
- 作者Yoshida, I.; Katsuyama, T.; Hashimoto, J.; Taniguchi, Y.; Hayashi, H.
- 卷第28卷
- 期第7期
- 印刷ISSN0013-5194
- 文件大小320.17KB
- 发表时间1992
- DOI10.1049/el:19920396