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Control of Process-Induced Defects in the Formation of Single and Multiple layer dielectric Structures for Si Semiconductor Devices

Control of Process-Induced Defects in the Formation of Single and Multiple layer dielectric Structures for Si Semiconductor Devices

He, S. S.; Stephens, D. J.; Ma, Y.; Yasuda, T.; Habermahl, S.; Lucovsky, G.

期刊名称MRS Proceedings
作者He, S. S.; Stephens, D. J.; Ma, Y.; Yasuda, T.; Habermahl, S.; Lucovsky, G.
卷第262卷
电子ISSN1946-4274
文件大小449.94KB
发表时间1992-1
DOI10.1557/proc-262-653

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