发现好书期刊,享受阅读乐趣

海量图书期刊资源,随时随地畅享阅读乐趣

High-performance SiGe epitaxial base bipolar transistors produced by a reduced-pressure CVD reactor

High-performance SiGe epitaxial base bipolar transistors produced by a reduced-pressure CVD reactor

M. Hong; E. De Fresart; J. Steele; A. Zlotnicka; C. Stein; G. Tam; M. Racanelli; L. Knoch; Y. See; K. Evans
  • 作者M. Hong; E. De Fresart; J. Steele; A. Zlotnicka; C. Stein; G. Tam; M. Racanelli; L. Knoch; Y. See; K. Evans
  • 卷第14卷
  • 期第9期
  • 文件大小256.95KB
  • 发表时间1993
  • DOI10.1109/55.244710
  • 页码450-452
← 返回【学霸图书馆】主页