High-performance SiGe epitaxial base bipolar transistors produced by a reduced-pressure CVD reactor
M. Hong; E. De Fresart; J. Steele; A. Zlotnicka; C. Stein; G. Tam; M. Racanelli; L. Knoch; Y. See; K. Evans
- 作者M. Hong; E. De Fresart; J. Steele; A. Zlotnicka; C. Stein; G. Tam; M. Racanelli; L. Knoch; Y. See; K. Evans
- 卷第14卷
- 期第9期
- 文件大小256.95KB
- 发表时间1993
- DOI10.1109/55.244710
- 页码450-452