Epitaxial Si films on Ge(100) grown via H/Cl exchange
- 期刊名称Applied Physics Letters
- 作者Gates, S. M.; Koleske, D. D.; Heath, J. R.; Copel, M.
- 卷第62卷
- 期第5期
- 印刷ISSN0003-6951
- 文件大小608.00KB
- 发表时间1993
- DOI10.1063/1.108895
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