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Optimization of Ge/C ratio for compensation of misfit strain in solid phase epitaxial growth of SiGe layers

Optimization of Ge/C ratio for compensation of misfit strain in solid phase epitaxial growth of SiGe layers

Im, Seongil; Washburn, Jack; Gronsky, Ronald; Cheung, Nathan W.; Yu, Kin Man; Ager, Joel W.
  • 期刊名称Applied Physics Letters
  • 作者Im, Seongil; Washburn, Jack; Gronsky, Ronald; Cheung, Nathan W.; Yu, Kin Man; Ager, Joel W.
  • 卷第63卷
  • 期第19期
  • 印刷ISSN0003-6951
  • 文件大小599.71KB
  • 发表时间1993
  • DOI10.1063/1.110419
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