Broad-Pulsed Ga Ion-Beam-Assisted Etching of Si with Cl 2
- 期刊名称Japanese Journal of Applied Physics
- 作者Haraichi, Satoshi; Komuro, Masanori
- 卷第32卷
- 印刷ISSN0021-4922
- 电子ISSN1347-4065
- 文件大小996.59KB
- 发表时间1993-12-30
- DOI10.1143/JJAP.32.6168
- 页码6168-6172
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