Schottky Barrier Height of Phosphidized InGaAs
- 期刊名称Japanese Journal of Applied Physics
- 作者Sugino, Takashi; Sakamoto, Yoshifumi; Shirafuji, Junji
- 卷第32卷
- 印刷ISSN0021-4922
- 文件大小689.29KB
- 发表时间1993-2-15
- DOI10.1143/JJAP.32.L239
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