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Electronic structure of the Si
<sub/>6</sub>
/Ge
<sub/>6</sub>
(111) superlattice strained to a Ge substrate

Electronic structure of the Si ₆ /Ge ₆ (111) superlattice strained to a Ge substrate

Bass, J M; Matthai, C C; Milman, V; Payne, M

期刊名称Semiconductor Science and Technology
作者Bass, J M; Matthai, C C; Milman, V; Payne, M
卷第8卷
期第12期
印刷ISSN0268-1242
电子ISSN1361-6641
文件大小312.52KB
发表时间1993-12-01
DOI10.1088/0268-1242/8/12/015
页码2121-2124

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