[IEEE Proceedings of IEEE International Reliability Physics Symposium - Atlanta, GA, USA (1993.03.23-1993.03.25)] 31st Annual Proceedings Reliability Physics 1993 - A new low-voltage contrast mechanism to image local defects in very thin silicon dioxide films: true oxide electron beam induced current
Lau, W.S.; Chan, D.S.H.; Phang, J.C.H.; Chow, K.W.; Pey, K.S.; Lim, Y.P.; Cronquist, B.
- 作者Lau, W.S.; Chan, D.S.H.; Phang, J.C.H.; Chow, K.W.; Pey, K.S.; Lim, Y.P.; Cronquist, B.
- 文件大小1012.65KB
- 发表时间1993
- DOI10.1109/relphy.1993.283325
- 页码190-198