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Application of the Amphoteric Native Defect Model to Diffusion and Activation of Shallow Impurities in III-V Semiconductors

Application of the Amphoteric Native Defect Model to Diffusion and Activation of Shallow Impurities in III-V Semiconductors

Walukiewicz, W.
  • 期刊名称MRS Proceedings
  • 作者Walukiewicz, W.
  • 卷第300卷
  • 电子ISSN1946-4274
  • 文件大小772.64KB
  • 发表时间1993-1
  • DOI10.1557/proc-300-421
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