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Temperature dependence of minority hole mobility in n+-GaAs measured with a new variable temperature technique

Temperature dependence of minority hole mobility in n+-GaAs measured with a new variable temperature technique

Michael L. Lovejoy; Michael R. Melloch; Mark S. Lundstrom; Brian R. Keyes; Richard K. Ahrenkiel
  • 作者Michael L. Lovejoy; Michael R. Melloch; Mark S. Lundstrom; Brian R. Keyes; Richard K. Ahrenkiel
  • 卷第23卷
  • 期第7期
  • 印刷ISSN0361-5235
  • 电子ISSN1543-186X
  • 文件大小534.12KB
  • 发表时间1994-07
  • DOI10.1007/bf02653354
  • 页码669-673
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