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Carbon-doped InGaP/GaAs/InGaP double heterojunction bipolar transistors with a very low 1/f noise corner frequency of 108 kHz grown by chemical beam epitaxy

Carbon-doped InGaP/GaAs/InGaP double heterojunction bipolar transistors with a very low 1/f noise corner frequency of 108 kHz grown by chemical beam epitaxy

Y.K. Chen; R. Kapre; W.T. Tsang; A. Tate; D.A. Humphrey; L. Fan

作者Y.K. Chen; R. Kapre; W.T. Tsang; A. Tate; D.A. Humphrey; L. Fan
卷第136卷
印刷ISSN0022-0248
文件大小289.17KB
发表时间1994
DOI10.1016/0022-0248(94)90413-8
页码221-224

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