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Fabrication of high performance 512Kb SRAMs in 0.25 μm CMOS technology using x-ray lithography

Fabrication of high performance 512Kb SRAMs in 0.25 μm CMOS technology using x-ray lithography

R. Viswanathan; D. Seeger; A. Bright; T. Bucelot; A. Pomerene; K. Petrillo; P. Blauner; P. Agnello; J. Warlaumont; J. Conway; D. Patel
  • 作者R. Viswanathan; D. Seeger; A. Bright; T. Bucelot; A. Pomerene; K. Petrillo; P. Blauner; P. Agnello; J. Warlaumont; J. Conway; D. Patel
  • 卷第23卷
  • 印刷ISSN0167-9317
  • 文件大小484.69KB
  • 发表时间1994
  • DOI10.1016/0167-9317(94)90148-1
  • 页码247-252
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