[IEEE International Workshop on Numerical Modeling of processes and Devices for Integrated Circuits: NUPAD V - Honolulu, HI, USA (5-6 June 1994)] Proceedings of International Workshop on Numerical Modeling of processes and Devices for Integrated Circuits: NUPAD V - Modeling of side wall passivation and ion saturation effects on etching profiles
- 作者Jie Zheng, ; McVittie, J.P.
- 文件大小288.55KB
- 发表时间1994
- DOI10.1109/nupad.1994.343496
- 页码37-40