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Fundamental electrical properties of fluorinated and N2O plasma-annealed ultrathin silicon oxides grown by microwave plasma afterglow oxidation at low temperatures

Fundamental electrical properties of fluorinated and N2O plasma-annealed ultrathin silicon oxides grown by microwave plasma afterglow oxidation at low temperatures

Chen, P. C.; Hsu, Klaus Y. J.; Hwang, H. L.; Lin, J. Y.

期刊名称Journal of Applied Physics
作者Chen, P. C.; Hsu, Klaus Y. J.; Hwang, H. L.; Lin, J. Y.
卷第76卷
期第9期
印刷ISSN0021-8979
文件大小850.82KB
发表时间1994
DOI10.1063/1.357170

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