Diffusion-limited interaction of dislocation loops and interstitials during dry oxidation in silicon

• 期刊名称Applied Physics Letters
• 作者Park, Heemyong; Robinson, Heyward; Jones, Kevin S.; Law, Mark E.
• 卷第65卷
• 期第4期
• 印刷ISSN0003-6951
• 文件大小606.04KB
• 发表时间1994
• DOI10.1063/1.112325