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Effect of buried Si-SiO2 interfaces on oxidation and implant-enhanced dopant diffusion in thin silicon-on-insulator films

Effect of buried Si-SiO2 interfaces on oxidation and implant-enhanced dopant diffusion in thin silicon-on-insulator films

Crowder, S. W.; Hsieh, C. J.; Griffin, P. B.; Plummer, J. D.

期刊名称Journal of Applied Physics
作者Crowder, S. W.; Hsieh, C. J.; Griffin, P. B.; Plummer, J. D.
卷第76卷
期第5期
印刷ISSN0021-8979
文件大小1341.39KB
发表时间1994
DOI10.1063/1.357539

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