Atomic layer epitaxy of Si on Ge(100): Direct recoiling studies of film morphology
- 期刊名称Journal of Applied Physics
- 作者Koleske, D. D.; Gates, S. M.
- 卷第76卷
- 期第3期
- 印刷ISSN0021-8979
- 文件大小1240.72KB
- 发表时间1994
- DOI10.1063/1.357741
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