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<b>
<i>S</i>
<i>i</i>
<i>H</i>
<sub/>3</sub><i>C</i>
<i>H</i>
<sub/>3</sub>
+
<i>F</i>
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: A Potential Reaction System for Preparing Uniform SiC Film Predicted by Using an Ab Initio Molecular Orbital Method

S i H ₃C H ₃ + F : A Potential Reaction System for Preparing Uniform SiC Film Predicted by Using an Ab Initio Molecular Orbital Method

Sato, Kota; Yano, Daisuke; Iwabuchi, Susumu; Hirano, Tsuneo; Koinuma, Hideomi

期刊名称Japanese Journal of Applied Physics
作者Sato, Kota; Yano, Daisuke; Iwabuchi, Susumu; Hirano, Tsuneo; Koinuma, Hideomi
卷第33卷
印刷ISSN0021-4922
电子ISSN1347-4065
文件大小616.73KB
发表时间1994-9-15
DOI10.1143/JJAP.33.4801
页码4801-4806

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