Amorphous silicon/amorphous silicon carbide heterojunctions applied to memory device structures
- 期刊名称Electronics Letters
- 作者Sakata, I.; Sekigawa, T.; Nagai, K.; Hayashi, Y.; Yamanaka, M.
- 卷第30卷
- 期第9期
- 印刷ISSN0013-5194
- 电子ISSN1350-911X
- 文件大小208.15KB
- 发表时间1994-04-29
- DOI10.1049/el:19940478
- 页码688-689
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