Kinetic Ising model of site-correlated adsorption and surface diffusion in molecular-beam epitaxy
- 作者Hiroshi Nakayama; Makoto Tochigi; Hidefumi Maeda; Taneo Nishino
- 卷第150卷
- 印刷ISSN0022-0248
- 文件大小744.79KB
- 发表时间1995
- DOI10.1016/0022-0248(95)80201-m
- 页码168-175
Molecular beam epitaxy of Hg1−xCdxTe: Growth and characterizationJean-Pierre Faurie · 1994
Molecular beam epitaxial growth and characterization of epitaxial GaSe films on (001)GaAsNobuaki Kojima; Kei Sato; Maman Budiman; Akira Yamada; Makoto Konagai; Kiyoshi Takahashi; Yoshio Nakamura; Osamu Nittono · 1995
Epitaxial growth and characterization of CuGa <sub/>2</sub> O <sub/>4</sub> films by laser molecular beam epitaxyWei, Hongling; Chen, Zhengwei; Wu, Zhenping; Cui, Wei; Huang, Yuanqi; Tang, Weihua · AIP Advances · 2017
Molecular beam epitaxial growth of indium antimonide and its characterizationPham, H. T.; Yoon, S. F.; Boning, D.; Wicaksono, S. · 2007
Epitaxial growth and characterization of GaSxSe1−x layered compound semiconductor by molecular beam epitaxyMaman Budiman; Tamotsu Okamoto; Akira Yamada; Makoto Konagai · 1997
Growth and characterization of In2Se3 epitaxial films by molecular beam epitaxyTamotsu Okamoto; Akira Yamada; Makoto Konagai · 1997
Molecular beam epitaxial growth and characterization of lead telluride for laser diodesDale L. Partin · 1981
Molecular beam epitaxial growth and characterization of CoAl on AlAs/GaAsTanaka, M.; Sakakibara, H.; Nishinaga, T. · Applied Physics Letters · 1991