Strain relaxation in InGaAs/GaAs quantum wells grown on GaAs (111)A substrates
- 作者Pablo O. Vaccaro; Mitsuo Takahashi; Kazuhisa Fujita; Toshihide Watanabe
- 卷第150卷
- 印刷ISSN0022-0248
- 文件大小443.82KB
- 发表时间1995
- DOI10.1016/0022-0248(95)80262-b
- 页码503-507
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