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[IEEE Seventh International Conference on Indium Phosphide and Related Materials - Hokkaido, Japan (9-13 May 1995)] Seventh International Conference on Indium Phosphide and Related Materials - Graded-GaAs/sub 1-x/P/sub x/ base in heterojunction bipolar transistors with InGaP emitters

[IEEE Seventh International Conference on Indium Phosphide and Related Materials - Hokkaido, Japan (9-13 May 1995)] Seventh International Conference on Indium Phosphide and Related Materials - Graded-GaAs/sub 1-x/P/sub x/ base in heterojunction bipolar transistors with InGaP emitters

Ohkubo, M.; Ikeda, N.; Ninomiya, T.

作者Ohkubo, M.; Ikeda, N.; Ninomiya, T.
文件大小301.21KB
发表时间1995
DOI10.1109/iciprm.1995.522178
页码456-459

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