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Low Temperature Formation of Shallow p+n Junctions by BF[sub 2][sup +] Implantation into Thin Pd[sub 2]Si Films on Si Substrates

Low Temperature Formation of Shallow p+n Junctions by BF[sub 2][sup +] Implantation into Thin Pd[sub 2]Si Films on Si Substrates

Lin, C. T.
  • 期刊名称Journal of The Electrochemical Society
  • 作者Lin, C. T.
  • 卷第142卷
  • 期第5期
  • 印刷ISSN0013-4651
  • 文件大小1363.66KB
  • 发表时间1995
  • DOI10.1149/1.2048616
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