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Initial oxidation of silicon (100): A unified chemical model for thin and thick oxide growth rates and interfacial structure

Initial oxidation of silicon (100): A unified chemical model for thin and thick oxide growth rates and interfacial structure

T. K. Whidden
  • 作者T. K. Whidden
  • 文件大小825.90KB
  • 发表时间1995
  • DOI10.1116/1.587867
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