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Valence-Band Offset at the Zn-P Interface Between ZnSe and III-V Wide Gap Semiconductor Alloys: A First-Principles Investigation

Valence-Band Offset at the Zn-P Interface Between ZnSe and III-V Wide Gap Semiconductor Alloys: A First-Principles Investigation

Bernardini, F.; Nieminen, R. M.
  • 期刊名称MRS Proceedings
  • 作者Bernardini, F.; Nieminen, R. M.
  • 卷第408卷
  • 电子ISSN1946-4274
  • 文件大小467.30KB
  • 发表时间1995-1
  • DOI10.1557/proc-408-539
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