Extremely strong and sharp photoluminescence lines from nitrogen atomic-layer-doped GaAs, AlGaAs and AlGaAs/GaAs single quantum wells
- 作者Toshiki Makimoto; Naoki Kobayashi
- 卷第25卷
- 期第9期
- 印刷ISSN0361-5235
- 电子ISSN1543-186X
- 文件大小330.42KB
- 发表时间1996-09
- DOI10.1007/bf02655394
- 页码1527-1530