The effect of dose rate on ion implanted impurity profiles in silicon

S. Tian; S.-H. Yang; S. Morris; K. Parab; A.F. Tasch; D. Kamenitsa; R. Reece; B. Freer; R.B. Simonton; C. Magee

作者S. Tian; S.-H. Yang; S. Morris; K. Parab; A.F. Tasch; D. Kamenitsa; R. Reece; B. Freer; R.B. Simonton; C. Magee
卷第112卷
印刷ISSN0168-583X
文件大小443.70KB
发表时间1996
DOI10.1016/0168-583x(95)01280-x
页码144-147

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