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Electroluminescence and forward bias currents in amorphous silicon p-i-n diodes: the effect of steady state bias and large i-layer thickness

Electroluminescence and forward bias currents in amorphous silicon p-i-n diodes: the effect of steady state bias and large i-layer thickness

R. Carius; F. Becker; R. Brüggemann; H. Wagner

作者R. Carius; F. Becker; R. Brüggemann; H. Wagner
印刷ISSN0022-3093
文件大小506.63KB
发表时间1996
DOI10.1016/0022-3093(95)00688-5

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