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Surface migration of Si atoms based on the kinetics of a Si microcluster on a Si(001) surface

Surface migration of Si atoms based on the kinetics of a Si microcluster on a Si(001) surface

Takahisa Doi; Masakazu Ichikawa; Shigeyuki Hosoki; Ken Ninomiya

作者Takahisa Doi; Masakazu Ichikawa; Shigeyuki Hosoki; Ken Ninomiya
卷第351卷
印刷ISSN0039-6028
文件大小877.01KB
发表时间1996
DOI10.1016/0039-6028(95)01358-x

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