Analysis of low energy boron implants in silicon through SiO2 films: implantation damage and anomalous diffusion : L. Kaabi, C. Gontrand, B. Remaki, F. Seigneur and B. Balland. Microelectronics Journal, 25, 567 (1994)
- 卷第36卷
- 期第3期
- 印刷ISSN0026-2714
- 文件大小127.04KB
- 发表时间1996
- DOI10.1016/0026-2714(96)82008-7
- 页码455-456
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