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[IEEE 1996 IEEE Hong Kong Electron Devices Meeting - Hong Kong (29 June 1996)] Proceedings 1996 IEEE Hong Kong Electron Devices Meeting - SIMNI SOI formed by high intensity nitrogen implantation

[IEEE 1996 IEEE Hong Kong Electron Devices Meeting - Hong Kong (29 June 1996)] Proceedings 1996 IEEE Hong Kong Electron Devices Meeting - SIMNI SOI formed by high intensity nitrogen implantation

Poon, M.C.; Wong, S.P.; Lam, Y.W.; Chu, P.K.; Sin, J.K.O.

作者Poon, M.C.; Wong, S.P.; Lam, Y.W.; Chu, P.K.; Sin, J.K.O.
文件大小240.69KB
发表时间1996
DOI10.1109/HKEDM.1996.566298
页码25-28

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