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On the theory of barrier-δ-doped quantum well Ge0.3Si0.7/Si/Ge0.3Si0.7 grown on Ge0.3Si0.7 (001)

On the theory of barrier-δ-doped quantum well Ge0.3Si0.7/Si/Ge0.3Si0.7 grown on Ge0.3Si0.7 (001)

Xu, Zhi-Zhong
  • 期刊名称Journal of Applied Physics
  • 作者Xu, Zhi-Zhong
  • 卷第79卷
  • 期第7期
  • 印刷ISSN0021-8979
  • 文件大小368.75KB
  • 发表时间1996
  • DOI10.1063/1.361189
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