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Electrical characteristics of oxygen precipitation related defects in Czochralski silicon wafers

Electrical characteristics of oxygen precipitation related defects in Czochralski silicon wafers

F.G. Kirscht; Y. Furukawa; W. Seifert; K. Schmalz; A. Buczkowski; S.B. Kim; H. Abe; H. Koya; J. Bailey
  • 作者F.G. Kirscht; Y. Furukawa; W. Seifert; K. Schmalz; A. Buczkowski; S.B. Kim; H. Abe; H. Koya; J. Bailey
  • 卷第36卷
  • 印刷ISSN0921-5107
  • 文件大小483.29KB
  • 发表时间1996
  • DOI10.1016/0921-5107(95)01289-3
  • 页码230-236
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