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Electron density effects in the modulation spectroscopy of strained and lattice-matched InGaAs/InAlAs/InP high-electron-mobility transistor structures

Electron density effects in the modulation spectroscopy of strained and lattice-matched InGaAs/InAlAs/InP high-electron-mobility transistor structures

Dimoulas, A.; Davidow, J.; Giapis, K. P.; Georgakilas, A.; Halkias, G.; Kornelios, N.
  • 期刊名称Journal of Applied Physics
  • 作者Dimoulas, A.; Davidow, J.; Giapis, K. P.; Georgakilas, A.; Halkias, G.; Kornelios, N.
  • 卷第80卷
  • 期第6期
  • 印刷ISSN0021-8979
  • 文件大小345.83KB
  • 发表时间1996
  • DOI10.1063/1.363219
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